N-type Bulk GaN wafer 4'',Prime/LD grade                
4'' Bulk GaN substrate wafer,HVPE Method                
Diameter: 100.0±0.25mm                
Orien: C-Plane(0001) ±0.5 deg                
Primary flat orien:A-plane(11-20) ±0.2deg                
Primary flat length: 32.5±2.5mm                
Secondary flat orien:M-plane(10-10) ±0.2deg                
Secondary flat length: 16.0±1.0mm                
Thickness: 400±30um                
TTV: </=15um ; Bow: </=20um                
Micro-roughness: Ra</=0.2nm                
Front surface finish: Epi-polished                
Back surface finish: Polished                
Micro-roughness: Ra</=1.0nm                
Dislocation density: <(1~6)E6/cm2                
Conduction type: N-type                
Resistivity: ≤ 0.5 Ohm.cm                
Laser Marking: Front side/Back side or None                
Packaging: Clean room,indicidual fluoroware wafer vacuum sealed