8'' Silicon-on-Sapphire Wafer,Prime grade                    
  Substrate:                    
Material: 99.996% high purity monocrystalline Al2O3                    
Orientation: R-Plane (1-102)                    
Off-cut Non Off-cut: +/- 1.0 degree                    
Diameter: 200.0 +/- 0.25mm                    
Thickness: 725 +/- 25 microns                    
Notch per SEMI M1-1105                     
Notch location: 45 +/- 2° CCW off C-axis projection onto R-plane                     
Front Surface: Finish EPI ready polished Ra </= 0.3 nm                    
TTV: </= 20 microns / Bow: </= 30 microns / Warp: </= 40 microns                    
Flatness (TIR): </= 20 microns                    
Back Surface: Fine ground,Ra<1.0um                    
Laser Marking: Back Side                    
Packaging: Atmosphere Argon vacuum packed in class 100 clean room                    
Additional Notes:                    
Metallic Contamination: <5E10 atoms/cm^2 by VPD for Ca, Na, K, Cr, Zn, Fe, Cu and Ni                    
LPD: </=40 @ >/=0.2 microns                    
Edge Exclusion: 5 mm                    
                    
  EPI Layer                    
Thickness of Silicon EPI Layer center point: 0.1~3.0um +/- 10%                    
Film Crystallinity & Surface Quality: in accordance with SEMI M4-1296                    
Resistivity: > 100 Ohm-cm (intrinsic silicon) ; <100 Ohm.cm based on P/N-type doped                    
Microparticulate density (for particles greater than 2 microns);< 2 per cm^-2